Lifetimes of excited levels for atomic silicon

dc.contributor.authorAtes, S.
dc.contributor.authorUgurtan, H. H.
dc.date.accessioned2020-03-26T18:42:21Z
dc.date.available2020-03-26T18:42:21Z
dc.date.issued2013
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe lifetimes of some excited levels for atomic silicon are calculated using the weakest bound electron potential model theory (WBEPMT) and the quantum defect orbital theory. In the WBEPMT framework, we have employed both numerical Coulomb Approximation wave functions and numerical non-relativistic Hartree-Fock wave functions for expectation values of radii. The obtained lifetime results have been compared with theoretical and experimental data in the literature.en_US
dc.description.sponsorshipSelcuk University Scientific Research Projects (BAP) Coordinating OfficeSelcuk Universityen_US
dc.description.sponsorshipThe authors gratefully acknowledge Perihan Ugurtan for her help and the Selcuk University Scientific Research Projects (BAP) Coordinating Office for support.en_US
dc.identifier.doi10.1007/s12648-012-0167-2en_US
dc.identifier.endpage17en_US
dc.identifier.issn0973-1458en_US
dc.identifier.issn0974-9845en_US
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage9en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s12648-012-0167-2
dc.identifier.urihttps://hdl.handle.net/20.500.12395/29613
dc.identifier.volume87en_US
dc.identifier.wosWOS:000312880300002en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherINDIAN ASSOC CULTIVATION SCIENCEen_US
dc.relation.ispartofINDIAN JOURNAL OF PHYSICSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectSilicon atomen_US
dc.subjectLifetimeen_US
dc.subjectThe weakest bound electron potential model theoryen_US
dc.subjectThe quantum defect orbital theoryen_US
dc.titleLifetimes of excited levels for atomic siliconen_US
dc.typeArticleen_US

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