Yueksel, Oe. FarukOcak, S. B.Selcuk, A. B.2020-03-262020-03-2620080042-207Xhttps://dx.doi.org/10.1016/j.vacuum.2008.02.002https://hdl.handle.net/20.500.12395/22441High frequency characteristics of tin oxide (SnO2) thin films were studied. SnO2 thin films have been successfully grown on n-type Si (111) substrates by using a spray deposition technique. The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the metal-oxide-semiconductor (Au/SnO2/n-Si) Schottky diodes were investigated in the high frequency range from 300 kHz to 5 MHz. It has been shown that the interface state density, D-it, ranges from 2.44 x 10(13) cm(-2) eV(-1) at 300 kHz to 0.57 x 10(13) cm(-2) eV(-1) at 5 MHz and exponentially decreases with increasing frequency. The C-V and G/omega-V characteristics confirm that the interface state density and series resistance of the diode are important parameters that strongly influence the electrical parameters exhibited by the metaloxide-semiconductor structure. (C) 2008 Elsevier Ltd. All rights reserved.en10.1016/j.vacuum.2008.02.002info:eu-repo/semantics/closedAccessMOS diodesSnO2series resistanceinterface state densityArticle821111831186Q1WOS:000257632400007Q3