Erdal, M. O.Kocyigit, A.Yildirim, M.2020-03-262020-03-2620200026-2714https://dx.doi.org/10.1016/j.microrel.2020.113591https://hdl.handle.net/20.500.12395/38620In order to determine the surface states (N-ss), series resistance (R-s), and (Cu:TiO2) interlayer effects on the electrical characteristics of the Al/Cu:TiO2/n-Si metal oxide semiconductor (MOS) capacitors, both capacitance (C) and conductance (G) values were measured for frequency ranges of 10 kHz-1 MHz and +/- 5 V voltage ranges. In addition, to know Cu doping concentration effect on the MOS capacitor, the Al/Cu:TiO2/n-Si was fabricated with various rates Cu:TiO2 interlayer (5, 10, 15%) grown on n-Si susbtrate by spin-coating. The increase in capacitance via decreasing frequencies was attributed to the existence of N-ss and their relaxation time. The frequency dependent diffusion potential (V-d), doping of donor atoms (N-d), Fermi energy (E-F), barrier height (Phi b) and depletion layer width (W-d) values were extracted from the linear part of reverse bias C-2-V curves. While the value the R-s decreased with increasing frequency, the N-ss values increased for the three MOS capacitors. The profiles of N-ss and R-s depending on voltage were also plotted by Nicollian-Brews methods and using high-low frequency (C-HF-C-LF) capacitance, respectively. The mean values of N-ss for three capacitors were found at about 10(12) eV(-1)cm(-2) as suitable electronic devices. The lower values of the N-ss can be attributed to passivation effect of Cu:TiO2 interlayer.en10.1016/j.microrel.2020.113591info:eu-repo/semantics/closedAccessAl/Cu:TiO2/n-Si (MOS) capacitorsSurface statesSeries resistanceCu doping effectArticle106Q2WOS:000517853100003Q3