Yilmaz, S.Safak, H.2020-03-262020-03-2620071386-9477https://dx.doi.org/10.1016/j.physe.2006.07.040https://hdl.handle.net/20.500.12395/21508In this study, we have calculated the oscillator strengths for intersubband electronic transitions associated with an on-center impurity in a spherical quantum dot. Numerical calculations have been performed for both infinite confinement case and for different finite confining potential values in a spherical CdS/SiO2 quantum dot. Also, for comparison purpose, oscillator strengths for a spherical ZnS/SiO2 quantum dot with an infinite confinement potential are evaluated. (c) 2006 Elsevier B.V. All rights reserved.en10.1016/j.physe.2006.07.040info:eu-repo/semantics/closedAccessoscillator strengthsquantum dotsimpurityintersubband transitionsOscillator strengths for the intersubband transitions in a CdS-SiO2 quantum dot with hydrogenic impurityArticle3614044Q2WOS:000243851800006Q3