Tozlu, CemKuş, MahmutCan, MustafaErsöz, Mustafa2020-03-262020-03-2620140040-6090https://dx.doi.org/10.1016/j.tsf.2014.07.055https://hdl.handle.net/20.500.12395/31141In this study, a solution-processed n-type photo-sensing organic thin film transistor was investigated using polymeric dielectric under different white light illuminations. N, N'-di (2-ethylhexyl)-3,4,9,10-perylene diimide and divinyl tetramethyl disiloxane-bis (benzo-cyclobutene) were used as a soluble active organic semiconductor and as a dielectric material, respectively. Stable amplification was observed in the visible region without gate bias by the device. The electrical characterization results showed that an n-type phototransistor with a saturated electron mobility of 0.6 x 10(-3) cm(2)/V.s and a threshold voltage of 1.8 V was obtained. The charge carrier density of the channel of the device exhibited photo-induced behaviors that strongly affected the electrical properties of the transistor. The photosensitivity and photoresponsivity values of the device were 63.82 and 24 mA/W, respectively. These findings indicate that perylene diimide is a promising material for use on organic based phototransistors. (C) 2014 Elsevier B.V. All rights reserved.en10.1016/j.tsf.2014.07.055info:eu-repo/semantics/openAccessPhototransistorPerylene diimidePhotosensorArticle5692227Q2WOS:000344749400005Q2