Şahin, MehmetDurmuş, HaziretKaplan, Ruhi2020-03-262020-03-262006Şahin, M., Durmuş, H., Kaplan, R., (2006). Current-Voltage Analysis of a-Si: H Schottky Diodes. Applied Surface Science, (252), 6269-6274. Doi: 10.1016/j.apsusc.2005.08.0340169-43321873-5584https://dx.doi.org/10.1016/j.apsusc.2005.08.034https://hdl.handle.net/20.500.12395/20415Direct current (dc)-voltage (I-V) characteristics of the hydrogenated amorphous silicon (a-Si:H) Schottky diode have been measured at different temperatures under dark and light. From the fourth quadrant of illuminated characteristics, fill factor (FF) values were obtained for each temperature measured (173-297 K). We have found that FF increases very little as the temperature is decreased. The measured data from I-V characteristics has been analyzed in detail. In particular, from dark I-V characteristics obtained, the density of state (DOS) near the Fermi level was determined using a simple model based on the space-charge limited current (SCLC). On the other hand, from the illuminated I-V characteristics, the density of carriers was calculated for each temperature using the analysis of diode equation as known. A comparison of the carrier density and the measured photocurrent as a function of the reverse temperature was also made and a good correspondence was obtained.en10.1016/j.apsusc.2005.08.034info:eu-repo/semantics/openAccessA-Si: H Schottky diodefill factorspace-charge limited currentDOScarrier densityArticle25262696274Q1WOS:000239735100023Q2