Tugluoglu, NihatYuksel, O. FarukSafak, HalukKaradeniz, Serdar2020-03-262020-03-2620121862-63001862-6319https://dx.doi.org/10.1002/pssa.201228163https://hdl.handle.net/20.500.12395/28486We have fabricated an Au/perylene-monoimide (PMI)/n-Si organic-on-inorganic Schottky device by spin coating of PMI solution on an n-Si semiconductor wafer. Current-voltage (I-V) measurements on the device in the temperature range of 75-300K were carried out. An abnormal decrease in the experimental barrier height Phi(B) and an increase in the ideality factor n with a decrease in temperature have been observed. This behaviour has been explained on the basis of thermionic emission theory with a double Gaussian distribution of the barrier heights due to the barrier height inhomogeneities. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen10.1002/pssa.201228163info:eu-repo/semantics/closedAccessbarrier heightGaussian distributionperylene-monoimideorganic semiconductorsSchottky diodesArticle2091123132316WOS:000313729800038Q2