Durmuş, Haziret.Karataş, Şükrü.2020-03-262020-03-262019Durmuş, H., Karataş, Ş. (2019). The analysis of the Electrical Characteristics and Interface State Densities of Re/n-type Si Schottky Barrier Diodes at Room Temperature. International Journal of Electronics, 106(4), 507-520.0020-72171362-3060https://dx.doi.org/10.1080/00207217.2018.1545145https://hdl.handle.net/20.500.12395/38225The main electrical characteristics of current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature of the Re/n-type Si Schottky barrier diodes prepared by pulsed laser deposition (PLD) method have been examined. The values of the basic electrical properties such as forward saturation current (I-o), ideality factors (n), barrier heights (?(bo)), rectification ratio (RR) and series resistances (R-S) were obtained from I-V and C-V measurements using different calculation methods. At low voltages (V0.3V), the electrical conduction was formed to take place by thermionic emission, whereas at high voltages (V>0.3V), a space charge limited conduction mechanism was shown. Furthermore, the interface state densities (N-SS) as a function of energy distribution (E-SS- E-V) was obtained from the I-Vdata by taking into account the bias dependence of the effective barrier height (phi(b)) for the Re/n-type Si Schottky barrier diodes.en10.1080/00207217.2018.1545145info:eu-repo/semantics/openAccessElectrical parametersinterface statesseries resistancerectification ratiosurface potentialArticle1064507520Q3WOS:000457604600002Q4