Tunç, T.Dökme, I.Altındal, S.Uslu, I.2020-03-262020-03-262010Tunç, T., Dökme, I., Altındal, S., Uslu, I., (2010). Temperature Dependent Current-Voltage (I-V) Characteristics of Au/N-Si (111) Schottky Barrier Diodes (SBDS) with Polyvinyl Alcohol (Co, Ni-Doped) Interfacial Layer. Optoelectronics and Advanced Materials-Rapid Communications, 4(7), 947-950.1842-65732065-3824https://hdl.handle.net/20.500.12395/25315Current-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (Phi(bo)) and ideality factor (n) determined from the forward bias 1 V characteristics were found strongly depend on temperature. The forward bias semi-logarithmic I-V curves for the different temperatures have an almost common cross-point at a certain bias voltage. While the value of n decreases, the Phi(Bo) increases with increasing temperature. Therefore, we attempted to draw a Phi(bo) vs q/2kT plot to obtain evidence of a Gaussian distribution of the barrier heights, and to calculate the values of mean barrier height and standard deviation at zero bias, respectively.eninfo:eu-repo/semantics/closedAccessI-V CharacteristicsIdeality FactorBarrier HeightInterface StatesArticle47947950Q4WOS:000281114100010Q4