Yuksel, O. F.Kus, M.Yildirim, M.2020-03-262020-03-2620170361-52351543-186Xhttps://dx.doi.org/10.1007/s11664-016-4999-yhttps://hdl.handle.net/20.500.12395/34858We report the interface properties of a perylene-diimide thin film between Au and n-Si substrate fabricated by the spin coating method. The relaxation time (tau) and interface trap density (D (it)) characteristics of the fabricated structure were obtained across various voltage ranges (0.0 V-300 mV) and various frequency ranges (1 kHz-1 MHz). We observed a peak in G (it)/omega versus log (f) plots from 0.0 V to 300 mV. This peak shows the presence of the interface state and its relaxation time. We observed a decrease in values at the same time as an increase in N (ss) values with the increasing applied voltage for the sample. The N (ss) and tau values found to be in the ranges 1.50 x 10(12) eV(-1) cm(-2)-2.83 x 10(12) eV(-1) cm(-2) and 2.83 x 10(-6) s-4.82 x 10(-7) s between 0.0 V and 0.3 V, respectively.en10.1007/s11664-016-4999-yinfo:eu-repo/semantics/closedAccessSchottky deviceperylene-diimidespin coatinginterface trap densityrelaxation timeArticle462882887Q3WOS:000392291200024Q3