Dökme, İlbilgeTunç, TuncayUslu, İbrahimAltındal, Şemsettin2020-03-262020-03-2620110379-6779https://dx.doi.org/10.1016/j.synthmet.2011.01.002https://hdl.handle.net/20.500.12395/26891Metal/polyvinyl alcohol/n-type silicon Schottky barrier (SB) devices have been fabricated in this study. The importance of this study is that PVA (Co, Zn doped) nanofiber film as an interfacial layer was formed by the electrospinning technique on n-type silicon substrate. The forward and reverse bias current-voltage (I-V) characteristics of this device were measured at room temperature. The Phi(Bo) value of about 0.749 eV obtained from I-V characteristics indicates that the contact potential barrier exists at the interface between organic and inorganic semiconductor layer, that is, PVA/n-Si interface. The variation in the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the Au/PVA (Co. Zn doped)/n-Si SB devices have been systematically investigated as a function of frequencies in the frequency range of 2 kHz-2 MHz at room temperature. The effects of density of interface states (N-ss) and series resistance (R-s) on I-V, C-V and G/omega-V characteristics were investigated. The high-frequency capacitance (C-m) and conductance (G(m)/omega) values measured under reverse bias were corrected to decrease the effects of series resistance. These results show that the locations of interface states between Si/PVA and series resistance have a significant effect on electrical characteristics of the Au/PVA (Co, Zn doped)/n-Si SB devices. (C) 2011 Elsevier B.V. All rights reserved.en10.1016/j.synthmet.2011.01.002info:eu-repo/semantics/closedAccessAu/PVA (Co, Zn-doped)/n-SiElectrical propertiesFT-IRElectrospinning techniqueArticle16105.06.2020474480Q1WOS:000288929400019Q2