Kavruk, Ahmet Emre2020-03-262020-03-2620181478-64351478-6443https://dx.doi.org/10.1080/14786435.2018.1519260https://hdl.handle.net/20.500.12395/36241The fundamental quantum mechanical properties of quantum dots (QDs), such as energy levels and corresponding wave functions, have important effects on characteristics of hi-tech electro-optical nano devices. The quantum mechanical properties of QDs are determined via the material content, shape and size of the structures. In this study, the electronic and interband optical properties of GaAs / Al(x)GA(1-x)As / GaAs / AlyGa1-yAs multi-shell quantum dot (MSQD) heterostructures as a function of the Al concentrations both in the interior (x) and in the exterior (y) barrier regions have been investigated theoretically for different sizes of core, barrier and well regions. For this purpose, Poisson and Schrodinger equations have been solved numerically by a self-consistent approach. Results of our calculations show that the electronic and optical properties of MSQDs can be changed effectively and this controllability makes them excellent candidates for new generation devices.en10.1080/14786435.2018.1519260info:eu-repo/semantics/closedAccessMulti-shell quantum dotinterband optical transitionradiative lifetimesingle excitonwavefunction engineeringtype-I-like and type-II-like localisation regimesArticle983431093125Q3WOS:000447813000004Q2