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The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature
(TAYLOR & FRANCIS LTD, 2019) Durmuş, Haziret.; Karataş, Şükrü.
The main electrical characteristics of current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature of the Re/n-type Si Schottky barrier diodes prepared by pulsed laser deposition (PLD) method have been examined. The values of the basic electrical properties such as forward saturation current (I-o), ideality factors (n), barrier heights (?(bo)), rectification ratio (RR) and series resistances (R-S) were obtained from I-V and C-V measurements using different calculation methods. At low voltages (V0.3V), the electrical conduction was formed to take place by thermionic emission, whereas at high voltages (V>0.3V), a space charge limited conduction mechanism was shown. Furthermore, the interface state densities (N-SS) as a function of energy distribution (E-SS- E-V) was obtained from the I-Vdata by taking into account the bias dependence of the effective barrier height (phi(b)) for the Re/n-type Si Schottky barrier diodes.