Yazar "Tuğluoğlu, Nihat" seçeneğine göre listele

Listeleniyor 1 - 2 / 2
  • Küçük Resim
    Öğe
    Some optical properties of melanin thick film
    (ELSEVIER, 2019) Akın, Ü.; Çelik, İlhami; Avcı, Çağrı; Tuğluoğlu, Nihat; Yüksel, Ömer Faruk
    The melanin obtained from brown-black sheep wool was prepared in the form of thick film by using drop casting method on the soda-lime glass substrate. The optical properties of the melanin thick film have been investigated by means of the optical measurements. It was observed that the thick film showed high transmittance value nearly up to 84 % in the IR spectral region and it showed very high absorbance in both UV and visible regions. From standard optical analysis, it was observed that melanin thick film had the properties of the semiconductors with indirect band gap, and the band gap energy value was found as 1.24 eV. Also, it was seen that calculated refractive index of the melanin thick film varies between 1.37 and 1.63 throughout the spectral region considered. (C) 2019 Elsevier Ltd. All rights reserved.
  • Küçük Resim
    Öğe
    The synthesis of 4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
    (SPRINGER, 2019) Yıldırım, Murat; Erdoğan, Ayşenur; Yüksel, Ömer Faruk; Kuş, Mahmut; Can, Mustafa; Akın, Ü.; Tuğluoğlu, Nihat
    In the present study, firstly, a 4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) (FC) organic compound was synthesized and its structural and optical characterization were carried. Then, the effect on the device of the FC thin film prepared between n-type silicon substrate and gold metal by the spin coating technique was reported. The ideality factor (n), barrier height (phi B) and series resistance (Rs) values of the prepared structure from the I-V data have been found at 1.08, 0.78eV and 240 at room temperature (300K), respectively. According to the Gaussian distribution of the barrier height obtained from the various temperature ranges (220-380K), the phi b0 and A* values from the ordinate intercept and the slope of the modified Richardson curve of ln versus 1/T plot which has been found to be 0.97eV and 114 A/cm(2)K(2), respectively. Results indicate that the high barrier height is achieved for the Au/FC/n-Si metal-organic layer-semiconductor diode as compared to the Au/n-Si metal-semiconductor (MS) diode.