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    Interface modification of DNTT-based organic field effect transistors using boronic acid derivatives
    (Institute of Physics Publishing, 2020) Alıç, Tuğbahan Yılmaz; Ablat, Abduleziz; Kyndiah, Adrica; Nicolas, Yohann; Can, Mustafa; Kuş, Mahmut; Abbas, Mamatimin
    The dielectric/semiconductor interface in organic field effect transistors (OFETs) is critical to their performance. Modification of this interface with functional molecules provides a wide range of possibilities for their applications as sensors. In this work, boronic acid molecules were used to modify the SiO2 dielectric surface in dinaphtho[2,3-b:2?,3?-f]thieno[3,2-b]thiophene based OFETs. The device parameters, including most notably the threshold voltage, were significantly improved. The dielectric/semiconductor interface was analyzed using various measurement techniques, such as contact angle and atomic force microscopy. Our work provides evidence that easily functionable boronic acid derivatives improve the device performance of OFETs, which lays the foundation for further studies of such interface modified OFETs for use in sensing applications. © 2019 IOP Publishing Ltd.
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    A multifunctional ınterlayer for solution processed high performance ındium oxide transistors
    (NATURE PUBLISHING GROUP, 2018) Kyndiah, Adrica; Ablat, Abduleziz; Guyot-Reeb, Seymour; Schultz, Thorsten; Zu, Fengshuo; Koch, Norbert; Amsalem, Patrick; Chiodini, Stefano; Alıç, Tuğbahan Yılmaz; Topal, Yasemin; Kuş, Mahmut; Hirsch, Lionel; Fasquel, Sophie; Abbas, Mamatimin
    Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In2O3 thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies.
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    Role of Oxide/Metal Bilayer Electrodes in Solution Processed Organic Field Effect Transistors
    (NATURE PUBLISHING GROUP, 2019) Ablat, Abduleziz; Kyndiah, Adrica; Houin, Geoffroy; Alıç, Tuğbahan Yılmaz; Hirsch, Lionel; Abbas, Mamatimin
    High performance, air stable and solution-processed small molecule 2,7-dioctyl[1]benzothieno[3,2-b] benzothiophene (C-8-BTBT) based organic field-effect transistors (OFETs) with various electrode configurations were studied in detail. The contact resistance of OFET devices with Ag, Au, WO3/Ag, MoO3/Ag, WO3/Au, and MoO3/Au were compared. Reduced contact resistance and consequently improved performance were observed in OFET devices with oxide interlayers compared to the devices with bare metal electrodes. The best oxide/metal combination was determined. The possible mechanisms for enhanced electrical properties were explained by favorable morphological and electronic structure of organic/metal oxide/metal interfaces.