Interface modification of DNTT-based organic field effect transistors using boronic acid derivatives
Küçük Resim Yok
Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Institute of Physics Publishing
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The dielectric/semiconductor interface in organic field effect transistors (OFETs) is critical to their performance. Modification of this interface with functional molecules provides a wide range of possibilities for their applications as sensors. In this work, boronic acid molecules were used to modify the SiO2 dielectric surface in dinaphtho[2,3-b:2?,3?-f]thieno[3,2-b]thiophene based OFETs. The device parameters, including most notably the threshold voltage, were significantly improved. The dielectric/semiconductor interface was analyzed using various measurement techniques, such as contact angle and atomic force microscopy. Our work provides evidence that easily functionable boronic acid derivatives improve the device performance of OFETs, which lays the foundation for further studies of such interface modified OFETs for use in sensing applications. © 2019 IOP Publishing Ltd.
Açıklama
Anahtar Kelimeler
boronic acid derivatives, dielectric/semiconductor interface, organic field effect transistor
Kaynak
Journal of Physics D: Applied Physics
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
53
Sayı
6
