Interface modification of DNTT-based organic field effect transistors using boronic acid derivatives

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dc.contributor.authorAlıç, Tuğbahan Yılmaz
dc.contributor.authorAblat, Abduleziz
dc.contributor.authorKyndiah, Adrica
dc.contributor.authorNicolas, Yohann
dc.contributor.authorCan, Mustafa
dc.contributor.authorKuş, Mahmut
dc.contributor.authorAbbas, Mamatimin
dc.date.accessioned2020-03-26T20:20:51Z
dc.date.available2020-03-26T20:20:51Z
dc.date.issued2020
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe dielectric/semiconductor interface in organic field effect transistors (OFETs) is critical to their performance. Modification of this interface with functional molecules provides a wide range of possibilities for their applications as sensors. In this work, boronic acid molecules were used to modify the SiO2 dielectric surface in dinaphtho[2,3-b:2?,3?-f]thieno[3,2-b]thiophene based OFETs. The device parameters, including most notably the threshold voltage, were significantly improved. The dielectric/semiconductor interface was analyzed using various measurement techniques, such as contact angle and atomic force microscopy. Our work provides evidence that easily functionable boronic acid derivatives improve the device performance of OFETs, which lays the foundation for further studies of such interface modified OFETs for use in sensing applications. © 2019 IOP Publishing Ltd.en_US
dc.identifier.doi10.1088/1361-6463/ab52e1en_US
dc.identifier.issn0022-3727en_US
dc.identifier.issue6en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://dx.doi.org/10.1088/1361-6463/ab52e1
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38682
dc.identifier.volume53en_US
dc.identifier.wosWOS:000526829200008en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorAlıç, Tuğbahan Yılmaz
dc.language.isoenen_US
dc.publisherInstitute of Physics Publishingen_US
dc.relation.ispartofJournal of Physics D: Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectboronic acid derivativesen_US
dc.subjectdielectric/semiconductor interfaceen_US
dc.subjectorganic field effect transistoren_US
dc.titleInterface modification of DNTT-based organic field effect transistors using boronic acid derivativesen_US
dc.typeArticleen_US

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