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    Analysis of inhomogeneous barrier and capacitance parameters for Al/rubrene/n-GaAs (100) Schottky diodes
    (ELSEVIER SCIENCE SA, 2015) Tugluoglu, N.; Caliskan, F.; Yuksel, O. F.
    In this paper, 5,6,11,12-tetraphenylnaphthacene (rubrene) was prepared on n type GaAs (100) substrate by spin coating. The device parameters of Al/rubrene/n-GaAs (100) Schottky diode have been investigated by means of current-voltage (I-V) characteristics in the temperature range 100-300 K by steps of 50 K and capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics at 1 MHz and 300 K. It was observed that ideality factors increased and barrier heights decreased with the decreasing temperature. The observed anomaly of temperature dependence of Schottky barrier height and ideality factor are explained by Gaussian distribution of Schottky barrier height in the same temperature ranges. Al/rubrene/n-GaAs Schottky barrier diode has been shown to have a Gaussian distribution with mean barrier height ((Phi) over bar (B)) of 1.076 eV and standard deviation (sigma(s)) of 0.119 V. Schottky barrier height (Phi(B)), series resistance (R-s), and the density of interface trap states (N-s s) of the diode were calculated as 1.004 eV, 1.18 k Omega and 2.145 x 10(11) eV(-1) cm(-2) for 1 MHz, respectively. (C) 2014 Elsevier B.V. All rights reserved.
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    Temperature dependence of current-voltage characteristics of Al/rubrene/n-GaAs (100) Schottky barrier diodes
    (ELSEVIER SCIENCE BV, 2016) Yuksel, O. F.; Tugluoglu, N.; Caliskan, F.; Yildirim, M.
    5,6,11,12-tetraphenylnaphthacene (rubrene) is fabricated by spin coating technique on n type GaAs (100) substrate. The current-voltage (I-V) characteristics of Al/rubrene/n-GaAs (100) Schottky diode have been measured in the temperature range of 100-300 K. The experimental values of saturation current (I-0), ideality factor (n) and barrier height (Phi(B)) are calculated as 2.749 pA, 6.051 and 0.297 eV at 100 K and 57.54 pA, 1.918 and 0.870 eV at 300 K, respectively. The values of series resistance (R-S) are calculated using Cheung functions at all temperatures. The R-S values are found as 1276.4 Omega and 119.7 Omega for 100 K and 300 K, respectively. It is found that barrier heights increased while ideality factors and series resistances decrease with the increasing temperature. (C) 2015 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of Conference Committee Members of International Semiconductor Science and Technology Conference 2015 (ISSTC 2015).