Analysis of inhomogeneous barrier and capacitance parameters for Al/rubrene/n-GaAs (100) Schottky diodes
Küçük Resim Yok
Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
ELSEVIER SCIENCE SA
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this paper, 5,6,11,12-tetraphenylnaphthacene (rubrene) was prepared on n type GaAs (100) substrate by spin coating. The device parameters of Al/rubrene/n-GaAs (100) Schottky diode have been investigated by means of current-voltage (I-V) characteristics in the temperature range 100-300 K by steps of 50 K and capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics at 1 MHz and 300 K. It was observed that ideality factors increased and barrier heights decreased with the decreasing temperature. The observed anomaly of temperature dependence of Schottky barrier height and ideality factor are explained by Gaussian distribution of Schottky barrier height in the same temperature ranges. Al/rubrene/n-GaAs Schottky barrier diode has been shown to have a Gaussian distribution with mean barrier height ((Phi) over bar (B)) of 1.076 eV and standard deviation (sigma(s)) of 0.119 V. Schottky barrier height (Phi(B)), series resistance (R-s), and the density of interface trap states (N-s s) of the diode were calculated as 1.004 eV, 1.18 k Omega and 2.145 x 10(11) eV(-1) cm(-2) for 1 MHz, respectively. (C) 2014 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Rubrene thin film, Spin coating, Gaussian distribution, Mean barrier height, Interface state density
Kaynak
SYNTHETIC METALS
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
199
