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    Doping of Nb to the Ba and Cu Sites in the Y0.6Gd0.4Ba2Cu3O7-delta
    (SPRINGER/PLENUM PUBLISHERS, 2013) Yilmaz, M.; Sonmez, E.; Dogan, O.
    Polycrystalline samples of Y0.6Gd0.4Ba2-x Nb (x) Cu3O7-delta and Y0.6Gd0.4Ba2Cu3-x Nb (x) O7-delta with different Nb contents (x=0.025, 0.075, 0.125, 0.175 and 0.225) were prepared using the solid state reaction method. Structural and electrical properties of new compounds were investigated with optical microscope, scanning electron microscopy (SEM), X-ray diffraction (XRD), Four Point Probe (FPP). The results indicated that Nb constituted YBa2NbO6 structure instead of substituting to the Y0.6Gd0.4Ba2Cu3O7-delta structure. YBa2NbO6 structures gathered between grains. Transition temperature did not change significantly, but critical current (J (c)) values decreased with increase of Nb concentration. The underlying reason is that the oxygen concentration of compounds remained unchanged due to Gd; thus, T (c) values did not change significantly.
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    The effect of the materials based on multiple intelligence theory upon the intelligence groups' learning process
    (AMER INST PHYSICS, 2007) Oral, I.; Dogan, O.
    The aim of this study is to find out the effect of the course materials based on Multiple Intelligence Theory upon the intelligence groups' learning process. In conclusion, the results proved that the materials prepared according to Multiple Intelligence Theory have a considerable effect on the students' learning process. This effect was particularly seen on the student groups of the musical-rhythmic, verbal-linguistic, interpersonal-social and naturalist intelligence.
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    Structural,, electrical and optical properties of Cd1-xZnxO thin films and alloying effects on K beta/K alpha intensity ratios
    (WILEY, 2006) Bacaksiz, E.; Bolat, S.; Cevik, U.; Dogan, O.; Abay, B.
    Cd1-xZnxO thin films were prepared by spray pyrolysis in air atmosphere on a glass substrate at 250 degrees C. The Zn content in Cd1-xZnxO films was varied from x = 0 to 0.60. Structural, electrical and optical properties of Cd1-xZnxO films were investigated by x-ray diffraction, electrical resistivity and optical transmittance spectra, respectively. As the Zn content in Cdl-xZnxO thin films increased, the preferred orientation of the films did not change, only the peak intensity of the planes decreased. In addition to the peaks of CdO, peaks of ZnO were observed in the film with x = 0.6. The resistivity of Cd1-xZnxO thin films increased with increasing Zn content. Transmittance spectra studies of films were carried out in the 190-1100 nm wavelength range and the results showed that the bandgap energy range varied from 2.42 to 3.25 eV. In addition, alloying effect on the K beta/K alpha intensity ratio in Cd1-xZnxO semiconductor thin films was studied. It was found that the K beta/K alpha intensity ratio is changed by alloying effects in Cd1-xZnxO semiconductor thin films for different composition of x. The results were compared with the theoretical values. Copyright (c) 2006 John Wiley & Sons, Ltd.