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    Activation energy of polarization due to electrical conductivity and dipole rotation in purified ca-bentonite
    (ELSEVIER, 2012) Kucukcelebi, Hayreddin; Durmus, Haziret; Deryal, Abdullah; Taser, Mehmet; Karakaya, Necati
    We determined the activation energy for dipole rotation and electrical conductivity by analyzing the frequency dependent dielectric permittivity measurements of purified Ca-Bentonite. The measurements were performed at four different temperatures between 296 K and 353 K and at frequencies between 5 Hz to 5 MHz. We used the Havriliak-Negami (HN) relation to represent the polarization due to dipole orientations and the Maxwell-Wagner-Sillars (MWS) relation with a power law term to represent the interfacial polarization. We obtained expressions for the real and imaginary parts of electric modulus M*(omega). We determined the relaxation times for HN and MWS contributions from a fit of the experimental data. Subsequently, the activation energies for HN and MWS contributions were obtained from an Arrhenius plot. The activation energy for the HN and MWS processes were found to be 22.3 kJ/mot and 18.2 kJ/mol, respectively. (C) 2012 Elsevier B.V. All rights reserved.
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    Analysis of Current-Voltage-Temperature and Capacitance-Voltage-Temperature Characteristics of Re/n-Si Schottky Contacts
    (SPRINGER, 2018) Durmus, Haziret; Kilic, Hamdi Sukur; Gezgin, Serap Yigit; Karatas, Sukru
    The current-capacitance-voltage characteristics of Re/n-type Si Schottky contacts have been measured in the temperature range of 60-300 K by steps of 20 K. The ohmic and Schottky contacts are made by the Pulsed Laser Deposition (PLD) technique. The values of barrier heights, ideality factors and serial resistances have been found to be strongly temperature dependent. In short, the ideality factor decreased and the barrier height increased with increasing temperature, when the temperature-dependent (I-V) characteristics were analyzed on the basis of the thermionic emission (TE) theory. The experimental barrier height and ideality factor were plotted against (kT) (-1) which gives two slopes, one is over the 60-140 K region and the other is over the 160-300 K region presenting a double Gaussian distribution of barrier heights. Two Gaussian distribution analyses of the I-V characteristics of the Re/n-type Si Schottky barrier diodes gave the mean barrier heights of 0.812 and 0.473 eV and standard deviations (sigma (s) ) of 102 mV and 55 mV, respectively. Therefore, these values of the mean barrier height have been verified with the modified ln(I (0)/ T (2)) - /2 k (2) T (2) vs (k T)(-1) plot which belongs to two temperature sections.
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    Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes
    (AMER INST PHYSICS, 2011) Durmus, Haziret; Atav, Ulfet
    A method for extracting the bias dependent behaviour of the series resistance of a Schottky barrier diode from experimental I-V data is presented. It was assumed that the behaviour of the Schottky barrier is well defined by thermionic emission theory. Relative merit of the method was determined by applying the method on some artificial sets of I-V data corresponding to known values of series resistances and comparing the results with existing methods. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3633116]