Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes
Küçük Resim Yok
Tarih
2011
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
AMER INST PHYSICS
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
A method for extracting the bias dependent behaviour of the series resistance of a Schottky barrier diode from experimental I-V data is presented. It was assumed that the behaviour of the Schottky barrier is well defined by thermionic emission theory. Relative merit of the method was determined by applying the method on some artificial sets of I-V data corresponding to known values of series resistances and comparing the results with existing methods. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3633116]
Açıklama
Anahtar Kelimeler
Kaynak
APPLIED PHYSICS LETTERS
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
99
Sayı
9
