Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes

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dc.contributor.authorDurmus, Haziret
dc.contributor.authorAtav, Ulfet
dc.date.accessioned2020-03-26T18:14:39Z
dc.date.available2020-03-26T18:14:39Z
dc.date.issued2011
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractA method for extracting the bias dependent behaviour of the series resistance of a Schottky barrier diode from experimental I-V data is presented. It was assumed that the behaviour of the Schottky barrier is well defined by thermionic emission theory. Relative merit of the method was determined by applying the method on some artificial sets of I-V data corresponding to known values of series resistances and comparing the results with existing methods. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3633116]en_US
dc.identifier.doi10.1063/1.3633116en_US
dc.identifier.issn0003-6951en_US
dc.identifier.issue9en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://dx.doi.org/10.1063/1.3633116
dc.identifier.urihttps://hdl.handle.net/20.500.12395/26490
dc.identifier.volume99en_US
dc.identifier.wosWOS:000294489300079en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherAMER INST PHYSICSen_US
dc.relation.ispartofAPPLIED PHYSICS LETTERSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.titleExtraction of voltage-dependent series resistance from I-V characteristics of Schottky diodesen_US
dc.typeArticleen_US

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