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Öğe The double Gaussian distribution of inhomogeneous barrier heights in the organic-on-inorganic Schottky devices(WILEY-V C H VERLAG GMBH, 2012) Tugluoglu, Nihat; Yuksel, O. Faruk; Safak, Haluk; Karadeniz, SerdarWe have fabricated an Au/perylene-monoimide (PMI)/n-Si organic-on-inorganic Schottky device by spin coating of PMI solution on an n-Si semiconductor wafer. Current-voltage (I-V) measurements on the device in the temperature range of 75-300K were carried out. An abnormal decrease in the experimental barrier height Phi(B) and an increase in the ideality factor n with a decrease in temperature have been observed. This behaviour has been explained on the basis of thermionic emission theory with a double Gaussian distribution of the barrier heights due to the barrier height inhomogeneities. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimÖğe Temperature dependence of current-voltage characteristics of Al/p-Si (100) Schottky barrier diodes(ELSEVIER SCIENCE BV, 2009) Yuksel, O. FarukThe current-voltage (I-V) characteristics on Al/p-Si (100) Schottky barrier diodes in the temperature range 100-300K were carried out. We have tried to determine some intrinsic and contact properties such as barrier heights, ideality factor, series resistance, and carrier concentrations. The apparent barrier height and the ideality factor calculated by using thermionic emission (TE) theory were found to be strongly temperature dependent. Evaluation of forward I-V data reveals a decrease in the zero-bias barrier height (Phi(B0)), but an increase in the ideality factor (n) with decrease in temperature. From the reverse-bias I-V graphs, it is found that the experimental carrier density (N(A)) values have increased with increasing temperature. (C) 2009 Elsevier B.V. All rights reserved.