The double Gaussian distribution of inhomogeneous barrier heights in the organic-on-inorganic Schottky devices
Yükleniyor...
Dosyalar
Tarih
2012
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
WILEY-V C H VERLAG GMBH
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We have fabricated an Au/perylene-monoimide (PMI)/n-Si organic-on-inorganic Schottky device by spin coating of PMI solution on an n-Si semiconductor wafer. Current-voltage (I-V) measurements on the device in the temperature range of 75-300K were carried out. An abnormal decrease in the experimental barrier height Phi(B) and an increase in the ideality factor n with a decrease in temperature have been observed. This behaviour has been explained on the basis of thermionic emission theory with a double Gaussian distribution of the barrier heights due to the barrier height inhomogeneities. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Açıklama
Anahtar Kelimeler
barrier height, Gaussian distribution, perylene-monoimide, organic semiconductors, Schottky diodes
Kaynak
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
WoS Q DeÄŸeri
Q2
Scopus Q DeÄŸeri
Cilt
209
Sayı
11
