The double Gaussian distribution of inhomogeneous barrier heights in the organic-on-inorganic Schottky devices

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dc.contributor.authorTugluoglu, Nihat
dc.contributor.authorYuksel, O. Faruk
dc.contributor.authorSafak, Haluk
dc.contributor.authorKaradeniz, Serdar
dc.date.accessioned2020-03-26T18:31:35Z
dc.date.available2020-03-26T18:31:35Z
dc.date.issued2012
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractWe have fabricated an Au/perylene-monoimide (PMI)/n-Si organic-on-inorganic Schottky device by spin coating of PMI solution on an n-Si semiconductor wafer. Current-voltage (I-V) measurements on the device in the temperature range of 75-300K were carried out. An abnormal decrease in the experimental barrier height Phi(B) and an increase in the ideality factor n with a decrease in temperature have been observed. This behaviour has been explained on the basis of thermionic emission theory with a double Gaussian distribution of the barrier heights due to the barrier height inhomogeneities. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [11401115]en_US
dc.description.sponsorshipThis work is supported by Selcuk University BAP office with the research project number 11401115.en_US
dc.identifier.doi10.1002/pssa.201228163en_US
dc.identifier.endpage2316en_US
dc.identifier.issn1862-6300en_US
dc.identifier.issn1862-6319en_US
dc.identifier.issue11en_US
dc.identifier.startpage2313en_US
dc.identifier.urihttps://dx.doi.org/10.1002/pssa.201228163
dc.identifier.urihttps://hdl.handle.net/20.500.12395/28486
dc.identifier.volume209en_US
dc.identifier.wosWOS:000313729800038en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherWILEY-V C H VERLAG GMBHen_US
dc.relation.ispartofPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectbarrier heighten_US
dc.subjectGaussian distributionen_US
dc.subjectperylene-monoimideen_US
dc.subjectorganic semiconductorsen_US
dc.subjectSchottky diodesen_US
dc.titleThe double Gaussian distribution of inhomogeneous barrier heights in the organic-on-inorganic Schottky devicesen_US
dc.typeArticleen_US

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