Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique

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dc.contributor.authorTugluoglu, N.
dc.contributor.authorYuksel, O. F.
dc.contributor.authorKaradeniz, S.
dc.contributor.authorSafak, H.
dc.date.accessioned2020-03-26T18:42:01Z
dc.date.available2020-03-26T18:42:01Z
dc.date.issued2013
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractWe have reported a detailed investigation of frequency dependent properties of the Au/perylene-monoimide (PMI)/n-Si Schottky diodes in this study. Schottky diodes based on PMI have been fabricated by spin coating method. The capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics have been measured in the frequency range from 30 kHz to 1 MHz at room temperature. The values of measured capacitance C-m and conductance G(m) under both reverse and forward bias have been corrected for the effect of series resistance to obtain the real diode capacitance and the conductance values. The density of interface states (D-it) distribution profiles as a function of frequency has been extracted from the corrected C-V and G-V measurements. Interface trap states of the PMI/n-Si Schottky device have decreased by increasing the applied frequency and were found to be 8.13 x 10(11) and 1.75 x 10(11) eV(-1) cm(-2) for 30 kHz and 1 MHz, respectively. (C) 2013 Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [11401115]en_US
dc.description.sponsorshipThis work is supported by Selcuk University BAP office with the research project number 11401115.en_US
dc.identifier.doi10.1016/j.mssp.2013.01.001en_US
dc.identifier.endpage791en_US
dc.identifier.issn1369-8001en_US
dc.identifier.issn1873-4081en_US
dc.identifier.issue3en_US
dc.identifier.startpage786en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.mssp.2013.01.001
dc.identifier.urihttps://hdl.handle.net/20.500.12395/29531
dc.identifier.volume16en_US
dc.identifier.wosWOS:000319641500033en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCI LTDen_US
dc.relation.ispartofMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSINGen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectOrganic semiconductoren_US
dc.subjectPerylene-monoimideen_US
dc.subjectSchottky deviceen_US
dc.subjectCurrent-voltageen_US
dc.subjectCapacitance-voltageen_US
dc.subjectConductance-voltageen_US
dc.subjectSeries resistanceen_US
dc.subjectInterface state densityen_US
dc.titleFrequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating techniqueen_US
dc.typeArticleen_US

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