Analysis of temperature dependent electrical properties of Au/perylene-diimide/n-Si Schottky diodes

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dc.contributor.authorYuksel, O. F.
dc.contributor.authorTugluoglu, N.
dc.contributor.authorSafak, H.
dc.contributor.authorNalcacigil, Z.
dc.contributor.authorKus, M.
dc.contributor.authorKaradeniz, S.
dc.date.accessioned2020-03-26T18:41:07Z
dc.date.available2020-03-26T18:41:07Z
dc.date.issued2013
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe electrical properties of Au/perylene-diimide/n-Si Schottky diode have been determined by means of current-voltage measurements in the temperature range of 75-300 K. These devices showed good rectifying behavior and the temperature dependence of the current-voltage characteristics could be explained by thermionic emission mechanism. The experimental values of barrier height and ideality factor for device have been calculated as 0.168 eV and 7.63 eV at 75 K and 0.690 eV and 1.57 eV at 300 K, respectively. The fabricated Schottky diode shows non-ideal current-voltage behavior and so it is thought that the device have a metal-interface layer-semiconductor configuration. In addition to current-voltage measurements, the room temperature capacitance-voltage characteristics of Au/perylene-diimide/n-Si devices were also investigated. The barrier height value of 1.051 eV obtained from the capacitance-voltage measurements was found to be higher than that of 0.690 eV obtained from the current-voltage measurements at room temperature. Furthermore, the energy distribution of the interface state density determined from current-voltage characteristics increases exponentially with bias from 8.01 x 10(12) eV(-1) cm(-2) at ( E-c - 0.666) eV to 5.86 x 10(13) eV(-1) cm(-2) at (E-c - 0.575) eV. (C) 2013 Elsevier B. V. All rights reserved.en_US
dc.description.sponsorshipBAP office of Selcuk UniversitySelcuk University [11401116]en_US
dc.description.sponsorshipThis work is supported by the BAP office of Selcuk University with the research project number 11401116.en_US
dc.identifier.doi10.1016/j.tsf.2013.02.042en_US
dc.identifier.endpage620en_US
dc.identifier.issn0040-6090en_US
dc.identifier.startpage614en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.tsf.2013.02.042
dc.identifier.urihttps://hdl.handle.net/20.500.12395/29221
dc.identifier.volume534en_US
dc.identifier.wosWOS:000317736700103en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SAen_US
dc.relation.ispartofTHIN SOLID FILMSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectMetal-organic-inorganic semiconductor structureen_US
dc.subjectCurrent-voltage characteristicsen_US
dc.subjectCapacitance-voltage characteristicsen_US
dc.subjectPerylene-diimideen_US
dc.subjectInterface statesen_US
dc.subjectBarrier heighten_US
dc.titleAnalysis of temperature dependent electrical properties of Au/perylene-diimide/n-Si Schottky diodesen_US
dc.typeArticleen_US

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