A detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature range

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dc.contributor.authorYuksel, O. F.
dc.contributor.authorKus, M.
dc.contributor.authorSimsir, N.
dc.contributor.authorSafak, H.
dc.contributor.authorSahin, M.
dc.contributor.authorYenel, E.
dc.date.accessioned2020-03-26T18:08:12Z
dc.date.available2020-03-26T18:08:12Z
dc.date.issued2011
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe current-voltage characteristics of Au/perylene-monoimide (PMI)/n-Si Schottky device have been investigated at a wide temperature range between 75 and 300 K in detail. The measured current-voltage (I-V) characteristics of the device show a good rectification behavior at all temperatures. The electronic parameters such as the ideality factor and the barrier height are determined from the experimental data using standard current-voltage analysis method and also temperature dependence of these parameters is analyzed. In addition to the standard analysis, using the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the device, and a good agreement is obtained between relevant diode parameters. It was observed that Au/PMI/n-Si Schottky diodes exhibit space charge limited (SCL) conduction at all temperatures. Therefore, we have analyzed this SCL current mechanism in more detail. From this analysis, several electronic parameters related with the SCL mechanism are determined, and it is found that Poole-Frenkel effect is dominant in reverse bias. (C) 2011 American Institute of Physics. [doi:10.1063/1.3610394]en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk Universityen_US
dc.description.sponsorshipThis work was supported by Selcuk University BAP office.en_US
dc.identifier.doi10.1063/1.3610394en_US
dc.identifier.issn0021-8979en_US
dc.identifier.issn1089-7550en_US
dc.identifier.issue2en_US
dc.identifier.urihttps://dx.doi.org/10.1063/1.3610394
dc.identifier.urihttps://hdl.handle.net/20.500.12395/26050
dc.identifier.volume110en_US
dc.identifier.wosWOS:000293476300102en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherAMER INST PHYSICSen_US
dc.relation.ispartofJOURNAL OF APPLIED PHYSICSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.titleA detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature rangeen_US
dc.typeArticleen_US

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