Investigation of conversion efficiency of n-ZnO/p-Si heterojunction device produced by pulsed laser deposition (PLD)

Basit Öğe Kaydı
dc.contributor.authorGezgin, Serap Yiğit.
dc.contributor.authorKepceoğlu, Abdullah.
dc.contributor.authorToprak, Ahmet.
dc.contributor.authorKılıç, Hamdi Şükür.
dc.date.accessioned2020-03-26T20:14:50Z
dc.date.available2020-03-26T20:14:50Z
dc.date.issued2019
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.descriptionInternational Congress on Semiconductor Materials and Devices (ICSMD) -- AUG 17-19, 2017 -- Selcuk Univ, Konya, TURKEYen_US
dc.description.abstractIn this study, n-ZnO/p-Si heterojunction was produced by growing polycrystalline Zinc Oxide (ZnO) thin films on p-type Si (100) substrate at 500 mu m thickness using Pulsed Laser Deposition (PLD) method. The crystalline and morphologic structure of ZnO thin film were analysed by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM) techniques. The photovoltaic (PV) property of n-ZnO/p-Si heterojunction was investigated by using current-voltage (J-V) measurement under illumination at 70 mW/cm(2). The silver (Ag) metal thin film was deposited by PLD to make ohmic contacts to the n-ZnO/p-Si heterojunction structure. The barrier height and the ideality factor were calculated to be 0.51 eV and 12.37, respectively, at room temperature (RT). The largest values of open circuit voltage (V-oc) and short circuit current density (J(sc)) were about 250 mV and 1.63 mA/cm(2), respectively. The photoelectric conversion efficiency in the range of 0.12% have been achieved and presented in this paper. (C) 2019 Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipScientific and Technical Research Council of Turkey (TUBITAK)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [1649B031503748]; Scientific Research Projects Coordination Unit of Selcuk UniversitySelcuk University [14401087, 13301022]en_US
dc.description.sponsorshipAuthors kindly would like to thank,; -Scientific and Technical Research Council of Turkey (TUBITAK) for financial support via Grant No. 1649B031503748,; -Scientific Research Projects Coordination Unit of Selcuk University for financial support via Projects Nos. 14401087, 13301022 and; -Selcuk University, High Technology Research and Application Center for supplying with Infrastructure.; The data presented in this work will be as a part of Ph.D. thesis of the Serap YIGIT GEZGIN.en_US
dc.identifier.citationGezgin, S. Y., Kepceoğlu, A., Toprak, A., Kılıç, H. Ş. (2019). Investigation of Conversion Efficiency of n-ZnO/p-Si Heterojunction Device Produced by Pulsed Laser Deposition (PLD). Materials Today: Proceedings, 18, 1996-2002.
dc.identifier.endpage2002en_US
dc.identifier.issn2214-7853en_US
dc.identifier.startpage1996en_US
dc.identifier.urihttps://doi.org/10.1016/j.matpr.2019.06.691
dc.identifier.urihttps://hdl.handle.net/20.500.12395/37943
dc.identifier.volume18en_US
dc.identifier.wosWOS:000495858400027en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.institutionauthorGezgin, Serap Yiğit.
dc.institutionauthorKepceoğlu, Abdullah.
dc.institutionauthorToprak, Ahmet.
dc.institutionauthorKılıç, Hamdi Şükür.
dc.language.isoenen_US
dc.publisherELSEVIERen_US
dc.relation.ispartofMATERIALS TODAY-PROCEEDINGSen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectPLDen_US
dc.subjectheterojunctionen_US
dc.subjectZnOen_US
dc.subjectSien_US
dc.subjectefficiencyen_US
dc.titleInvestigation of conversion efficiency of n-ZnO/p-Si heterojunction device produced by pulsed laser deposition (PLD)en_US
dc.typeConference Objecten_US

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