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    High frequency characteristics of tin oxide thin films on Si
    (PERGAMON-ELSEVIER SCIENCE LTD, 2008) Yueksel, Oe. Faruk; Ocak, S. B.; Selcuk, A. B.
    High frequency characteristics of tin oxide (SnO2) thin films were studied. SnO2 thin films have been successfully grown on n-type Si (111) substrates by using a spray deposition technique. The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the metal-oxide-semiconductor (Au/SnO2/n-Si) Schottky diodes were investigated in the high frequency range from 300 kHz to 5 MHz. It has been shown that the interface state density, D-it, ranges from 2.44 x 10(13) cm(-2) eV(-1) at 300 kHz to 0.57 x 10(13) cm(-2) eV(-1) at 5 MHz and exponentially decreases with increasing frequency. The C-V and G/omega-V characteristics confirm that the interface state density and series resistance of the diode are important parameters that strongly influence the electrical parameters exhibited by the metaloxide-semiconductor structure. (C) 2008 Elsevier Ltd. All rights reserved.
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    Investigation of diode parameters using I-V and C-V characteristics of In/SiO(2)/p-Si (MIS) Schottky diodes
    (ELSEVIER SCIENCE BV, 2008) Yuksel, O. F.; Selcuk, A. B.; Ocak, S. B.
    A study on interface states density distribution and characteristic parameters of the In/SiO(2)/p-Si (MIS) capacitor has been made. The thickness of the SiO(2) film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 A. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 Omega and 0.592 eV, respectively. The energy distribution of the interface state density D(it) was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44 x 1013 eV(-1) cm(-2) in 0.329-E(v)eV to 1.11 x 10(13) eV(-1) cm(-2) in 0.527-E(v)eV at room temperature. Furthermore, the values of interface state density Dit obtained by the Hill-Coleman method from the C-V characteristics range from 52.9 x 10(13) to 1.11 x 1013 eV-1 cm(-2) at a frequency range of 30kHz-1 MHz. These values of D(it), and R(s) were responsible for the non-ideal behaviour of I-V and C-V characteristics. (C) 2008 Elsevier B.V. All rights reserved.