High frequency characteristics of tin oxide thin films on Si
Küçük Resim Yok
Tarih
2008
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
PERGAMON-ELSEVIER SCIENCE LTD
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
High frequency characteristics of tin oxide (SnO2) thin films were studied. SnO2 thin films have been successfully grown on n-type Si (111) substrates by using a spray deposition technique. The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the metal-oxide-semiconductor (Au/SnO2/n-Si) Schottky diodes were investigated in the high frequency range from 300 kHz to 5 MHz. It has been shown that the interface state density, D-it, ranges from 2.44 x 10(13) cm(-2) eV(-1) at 300 kHz to 0.57 x 10(13) cm(-2) eV(-1) at 5 MHz and exponentially decreases with increasing frequency. The C-V and G/omega-V characteristics confirm that the interface state density and series resistance of the diode are important parameters that strongly influence the electrical parameters exhibited by the metaloxide-semiconductor structure. (C) 2008 Elsevier Ltd. All rights reserved.
Açıklama
Anahtar Kelimeler
MOS diodes, SnO2, series resistance, interface state density
Kaynak
VACUUM
WoS Q Değeri
Q3
Scopus Q Değeri
Q1
Cilt
82
Sayı
11
