Investigation of diode parameters using I-V and C-V characteristics of In/SiO(2)/p-Si (MIS) Schottky diodes
Küçük Resim Yok
Tarih
2008
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
ELSEVIER SCIENCE BV
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
A study on interface states density distribution and characteristic parameters of the In/SiO(2)/p-Si (MIS) capacitor has been made. The thickness of the SiO(2) film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 A. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 Omega and 0.592 eV, respectively. The energy distribution of the interface state density D(it) was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44 x 1013 eV(-1) cm(-2) in 0.329-E(v)eV to 1.11 x 10(13) eV(-1) cm(-2) in 0.527-E(v)eV at room temperature. Furthermore, the values of interface state density Dit obtained by the Hill-Coleman method from the C-V characteristics range from 52.9 x 10(13) to 1.11 x 1013 eV-1 cm(-2) at a frequency range of 30kHz-1 MHz. These values of D(it), and R(s) were responsible for the non-ideal behaviour of I-V and C-V characteristics. (C) 2008 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
MIS Schottky diodes, insulator layer, I-V, C-V, frequency dependence, series resistance, interface state density
Kaynak
PHYSICA B-CONDENSED MATTER
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
403
Sayı
17
