Investigation of diode parameters using I-V and C-V characteristics of In/SiO(2)/p-Si (MIS) Schottky diodes

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dc.contributor.authorYuksel, O. F.
dc.contributor.authorSelcuk, A. B.
dc.contributor.authorOcak, S. B.
dc.date.accessioned2020-03-26T17:27:05Z
dc.date.available2020-03-26T17:27:05Z
dc.date.issued2008
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractA study on interface states density distribution and characteristic parameters of the In/SiO(2)/p-Si (MIS) capacitor has been made. The thickness of the SiO(2) film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 A. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 Omega and 0.592 eV, respectively. The energy distribution of the interface state density D(it) was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44 x 1013 eV(-1) cm(-2) in 0.329-E(v)eV to 1.11 x 10(13) eV(-1) cm(-2) in 0.527-E(v)eV at room temperature. Furthermore, the values of interface state density Dit obtained by the Hill-Coleman method from the C-V characteristics range from 52.9 x 10(13) to 1.11 x 1013 eV-1 cm(-2) at a frequency range of 30kHz-1 MHz. These values of D(it), and R(s) were responsible for the non-ideal behaviour of I-V and C-V characteristics. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physb.2008.01.039en_US
dc.identifier.endpage2697en_US
dc.identifier.issn0921-4526en_US
dc.identifier.issue17en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage2690en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.physb.2008.01.039
dc.identifier.urihttps://hdl.handle.net/20.500.12395/22469
dc.identifier.volume403en_US
dc.identifier.wosWOS:000257915100030en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofPHYSICA B-CONDENSED MATTERen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectMIS Schottky diodesen_US
dc.subjectinsulator layeren_US
dc.subjectI-Ven_US
dc.subjectC-Ven_US
dc.subjectfrequency dependenceen_US
dc.subjectseries resistanceen_US
dc.subjectinterface state densityen_US
dc.titleInvestigation of diode parameters using I-V and C-V characteristics of In/SiO(2)/p-Si (MIS) Schottky diodesen_US
dc.typeArticleen_US

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