Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets
Küçük Resim Yok
Tarih
2018
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
SPRINGER
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Hot injection synthesis route has been successfully applied for the preparation of high quality Cu2WSe4 (CWSe) nanosheets in order to determine their optical characterization and device parameters. Several techniques including XRD, SEM, TEM and SAED were used to characterize these nanosheets. These techniques confirmed that Cu2WSe4 nanosheets crystal shapes of synthesized are rectangular and square sheet and the average crystal size is between 20 and 40 nm. The spin coating technique was successfully used to deposit uniform of Cu2WSe4 thin film. Cu2WSe4 thin film has directly transition with a band gap of 1.64 eV. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple-Didomenico (WD) model. The single oscillator energy and the dispersion energy were estimated. Au/Cu2WSe4/n-Si structures was fabricated and its main electrical characteristics described by using current-voltage (I-V) methods. The forward and reverse bias current voltage (I-V) characteristics of Au/Cu2WSe4/n-Si at room temperature were studied to investigate its basic electrical parameters [i.e. saturation current (), ideality factor (), barrier height (), series ()]. Structural and optical mechanisms were discussed for future applications in optoelectronic devices.
Açıklama
Anahtar Kelimeler
Kaynak
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
29
Sayı
1
