Temperature dependence of current-voltage characteristics of Ag/p-SnSe Schottky diodes

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dc.contributor.authorTugluoglu, N
dc.contributor.authorKaradeniz, S
dc.contributor.authorSahin, M
dc.contributor.authorSafak, H
dc.date.accessioned2020-03-26T16:55:31Z
dc.date.available2020-03-26T16:55:31Z
dc.date.issued2004
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe current-voltage (I-V) characteristics of Ag/p-SnSe Schottky barrier diodes were measured in the temperature range 80-350 K. We have tried to determine some intrinsic and contact properties such as barrier heights, ideality factor, series resistance and carrier concentrations. The apparent barrier height and the ideality factor calculated by using thermionic emission (TE) theory were found to be strongly temperature dependent. Evaluating forward I-V data reveals a decrease at the zero-bias barrier height (Phi(BO)), but an increase at the ideality factor (n) with decrease in temperature, and these changes are more pronounced below 200 K. It is shown that the values of R-s estimated from Cheung's method were strongly temperature dependent and decreased with increasing temperature. From the reverse-bias I-V graphs, it is found that the experimental carrier density (N-A) values increased with increasing temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy of 0.35 eV. It has been found that all contacts are of Schottky type. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.apsusc.2004.03.238en_US
dc.identifier.endpage327en_US
dc.identifier.issn0169-4332en_US
dc.identifier.issn1873-5584en_US
dc.identifier.issue01.04.2020en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage320en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.apsusc.2004.03.238
dc.identifier.urihttps://hdl.handle.net/20.500.12395/19220
dc.identifier.volume233en_US
dc.identifier.wosWOS:000222497700041en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofAPPLIED SURFACE SCIENCEen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectIV-VI layered semiconductor compoundsen_US
dc.subjectSchottky barrier diodeen_US
dc.subjectI-V characteristicsen_US
dc.titleTemperature dependence of current-voltage characteristics of Ag/p-SnSe Schottky diodesen_US
dc.typeArticleen_US

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