Mechanism Studies on CVD of Boron Carbide from a Gas Mixture of BCl3, CH4, and H-2 in a Dual Impinging-jet Reactor

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dc.contributor.authorKaraman, Mustafa
dc.contributor.authorSezgi, Naime Ash
dc.contributor.authorDogu, Timur
dc.contributor.authorOzbelge, Hilmi Onder
dc.date.accessioned2020-03-26T17:39:13Z
dc.date.available2020-03-26T17:39:13Z
dc.date.issued2009
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractNearly pure boron carbide free from impurities was produced on a tungsten substrate in a dual impinging-jet chemical vapor deposition reactor from a BCl3, CH4, and H-2 mixture. The Fourier Tran form Infrared (FTIR) analysis proved the formation Of reaction intermediate BHCl2, which is proposed to occur mainly in the gaseous boundary layer next to the substrate surface. Among a large number of reaction mechanisms proposed only the ones considering the molecular adsorption of boron carbide on the substrate surface gave reasonable fits. In the proposed mechanism dichloroborane is formed in the gas phase only as a by-product. Boron carbide, on the other hand, is formed through a series of surface reactions involving adsorbed boron trichloride, adsorbed methane and gas phase hydrogen. The simultaneous fit of the experimental rate data to the model expressions gave correlation coefficient values of 0.977 and 0.948, in predicting the B4C and BHCl2 formation rates, respectively. (c) 2009 American Institute of Chemical Engineers AIChE J, 55: 701-709, 2009en_US
dc.description.sponsorshipThe Scientific and Technological Research Council of Turkey (TUBITAK)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [Misag-217]; State Planning Organization of TurkeyTurkiye Cumhuriyeti Kalkinma Bakanligi [BAP-08-11-DPT2002K120510-IM-5]en_US
dc.description.sponsorshipThe authors thank to The Scientific and Technological Research Council of Turkey (TUBITAK) (project no: Misag-217) and State Planning Organization of Turkey (project no: BAP-08-11-DPT2002K120510-IM-5) for their financial supports of this project.en_US
dc.identifier.doi10.1002/aic.11717en_US
dc.identifier.endpage709en_US
dc.identifier.issn0001-1541en_US
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage701en_US
dc.identifier.urihttps://dx.doi.org/10.1002/aic.11717
dc.identifier.urihttps://hdl.handle.net/20.500.12395/23670
dc.identifier.volume55en_US
dc.identifier.wosWOS:000263980300012en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWILEY-BLACKWELLen_US
dc.relation.ispartofAICHE JOURNALen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectadsorption/gasen_US
dc.subjectdeposition methods (CVD, MOCVD)en_US
dc.subjectreaction kineticsen_US
dc.titleMechanism Studies on CVD of Boron Carbide from a Gas Mixture of BCl3, CH4, and H-2 in a Dual Impinging-jet Reactoren_US
dc.typeArticleen_US

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