Analysis of Current-Voltage-Temperature and Capacitance-Voltage-Temperature Characteristics of Re/n-Si Schottky Contacts

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dc.contributor.authorDurmus, Haziret
dc.contributor.authorKilic, Hamdi Sukur
dc.contributor.authorGezgin, Serap Yigit
dc.contributor.authorKaratas, Sukru
dc.date.accessioned2020-03-26T19:52:53Z
dc.date.available2020-03-26T19:52:53Z
dc.date.issued2018
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe current-capacitance-voltage characteristics of Re/n-type Si Schottky contacts have been measured in the temperature range of 60-300 K by steps of 20 K. The ohmic and Schottky contacts are made by the Pulsed Laser Deposition (PLD) technique. The values of barrier heights, ideality factors and serial resistances have been found to be strongly temperature dependent. In short, the ideality factor decreased and the barrier height increased with increasing temperature, when the temperature-dependent (I-V) characteristics were analyzed on the basis of the thermionic emission (TE) theory. The experimental barrier height and ideality factor were plotted against (kT) (-1) which gives two slopes, one is over the 60-140 K region and the other is over the 160-300 K region presenting a double Gaussian distribution of barrier heights. Two Gaussian distribution analyses of the I-V characteristics of the Re/n-type Si Schottky barrier diodes gave the mean barrier heights of 0.812 and 0.473 eV and standard deviations (sigma (s) ) of 102 mV and 55 mV, respectively. Therefore, these values of the mean barrier height have been verified with the modified ln(I (0)/ T (2)) - /2 k (2) T (2) vs (k T)(-1) plot which belongs to two temperature sections.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [09101063-11401124]; Kahramanmaras Sutcu Imam University BAP office [2015/3-90M]en_US
dc.description.sponsorshipThis work is supported by Selcuk University BAP office with the research Project Number 09101063-11401124 and Kahramanmaras Sutcu Imam University BAP office with the research Project Number 2015/3-90M. The authors wish to thank the two universities.en_US
dc.identifier.doi10.1007/s12633-016-9456-2en_US
dc.identifier.endpage369en_US
dc.identifier.issn1876-990Xen_US
dc.identifier.issn1876-9918en_US
dc.identifier.issue2en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage361en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s12633-016-9456-2
dc.identifier.urihttps://hdl.handle.net/20.500.12395/36328
dc.identifier.volume10en_US
dc.identifier.wosWOS:000427433100022en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.relation.ispartofSILICONen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectMS deviceen_US
dc.subjectI-V-T and C-V-T characteristicsen_US
dc.subjectElectrical propertiesen_US
dc.subjectGaussian distributionen_US
dc.titleAnalysis of Current-Voltage-Temperature and Capacitance-Voltage-Temperature Characteristics of Re/n-Si Schottky Contactsen_US
dc.typeArticleen_US

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