Electrical properties of Au/perylene-monoimide/p-Si Schottky diode

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dc.contributor.authorYuksel, O. F.
dc.contributor.authorTugluoglu, N.
dc.contributor.authorGulveren, B.
dc.contributor.authorSafak, H.
dc.contributor.authorKus, M.
dc.date.accessioned2020-03-26T18:41:46Z
dc.date.available2020-03-26T18:41:46Z
dc.date.issued2013
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractIn this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. We have investigated how electrical and interface characteristics like current-voltage characteristics (I-V), ideality factor (n), barrier height (Phi(B)) and series resistance (R-s) of diode change with temperature over a wide range of 100-300 K. Detailed analysis on the electrical properties of structure is performed by assuming the standard thermionic emission (TE) model. Possible mechanisms such as image force lowering, generation-recombination processes and interface states which cause deviations of n values from the unity have been discussed. Cheung-Cheung method is also employed to analysis the current-voltage characteristics and a good agreement is observed between the results. It is shown that the electronic properties of Schottky diode are very sensitive to the modification of perylene-monoimide (PMI) interlayer organic material and also to the temperature. The ideality factor was found to decrease and the barrier height to increase with increasing temperature. The temperature dependence of barrier height shows that the Schottky barrier height is inhomogeneous in nature at the interface. Such inhomogeneous behavior was explained on the basis of thermionic emission mechanism by assuming the existence of a Gaussian distribution of barrier heights. (c) 2013 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [11401115]en_US
dc.description.sponsorshipThis work is supported by Selcuk University BAP office with the research Project number 11401115.en_US
dc.identifier.doi10.1016/j.jallcom.2013.04.157en_US
dc.identifier.endpage36en_US
dc.identifier.issn0925-8388en_US
dc.identifier.issn1873-4669en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage30en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.jallcom.2013.04.157
dc.identifier.urihttps://hdl.handle.net/20.500.12395/29462
dc.identifier.volume577en_US
dc.identifier.wosWOS:000324082800007en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SAen_US
dc.relation.ispartofJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectOrganic compoundsen_US
dc.subjectElectronic materialsen_US
dc.subjectSemiconductorsen_US
dc.subjectThin filmsen_US
dc.subjectSchottky diodeen_US
dc.titleElectrical properties of Au/perylene-monoimide/p-Si Schottky diodeen_US
dc.typeArticleen_US

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