Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application

Basit Öğe Kaydı
dc.contributor.authorGullu H.H.
dc.contributor.authorYildiz D.E.
dc.contributor.authorKocyigit A.
dc.contributor.authorYıldırım M.
dc.date.accessioned2020-03-26T20:20:46Z
dc.date.available2020-03-26T20:20:46Z
dc.date.issued2020
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractIn this paper, the electrical characteristics of spin-coated PCBM:ZnO interlayered Al/PCBM:ZnO/Si diode are investigated under the aim of photodiode application. Under dark condition, the diode shows about four orders in magnitude rectification rate and diode illumination results in efficient rectification with increase in intensity. The analysis of current-voltage curve results a non-ideal diode characteristics according to the thermionic emission model due to the existence of parasitic resistances and interface states. The measured current-voltage values are used to extract the barrier height and ideality factor under dark and illumination conditions. Under illumination, photo-generated carriers contribute to the current flow and linear photo-conductivity behavior in photo-current measurements with illumination shows the possible use of hybrid PCBM:ZnO layer in Si-based photodiodes. In addition, change in the series and shunt resistance values under illumination is found to be effective in this light-sensing behavior of the diode. This characteristic is also observed from the typical on/off illumination switching behavior for the photodiodes in transient photo-current, photo-capacitance and photo-conductance measurements with the quick response to the illumination. The deviations from ideality are also discussed by means of distribution of interface states and series resistance depending on the applied frequency and bias voltage. © 2020en_US
dc.description.sponsorshipSelçuk Üniversitesi: 19401034en_US
dc.description.sponsorshipThis work is supported by Selçuk University BAP office with the research Project Number 19401034 .en_US
dc.identifier.doi10.1016/j.jallcom.2020.154279en_US
dc.identifier.issn0925-8388en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.jallcom.2020.154279
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38666
dc.identifier.volume827en_US
dc.identifier.wosWOS:000520405900033en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.relation.ispartofJournal of Alloys and Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectElectrical propertiesen_US
dc.subjectPCBM:ZnOen_US
dc.subjectPhotodiodeen_US
dc.subjectSpin coatingen_US
dc.titleElectrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode applicationen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu