The synthesis of 4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode

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dc.contributor.authorYıldırım, Murat
dc.contributor.authorErdoğan, Ayşenur
dc.contributor.authorYüksel, Ömer Faruk
dc.contributor.authorKuş, Mahmut
dc.contributor.authorCan, Mustafa
dc.contributor.authorAkın, Ü.
dc.contributor.authorTuğluoğlu, Nihat
dc.date.accessioned2020-03-26T20:19:35Z
dc.date.available2020-03-26T20:19:35Z
dc.date.issued2019
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Biyoteknoloji Bölümüen_US
dc.description.abstractIn the present study, firstly, a 4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) (FC) organic compound was synthesized and its structural and optical characterization were carried. Then, the effect on the device of the FC thin film prepared between n-type silicon substrate and gold metal by the spin coating technique was reported. The ideality factor (n), barrier height (phi B) and series resistance (Rs) values of the prepared structure from the I-V data have been found at 1.08, 0.78eV and 240 at room temperature (300K), respectively. According to the Gaussian distribution of the barrier height obtained from the various temperature ranges (220-380K), the phi b0 and A* values from the ordinate intercept and the slope of the modified Richardson curve of ln versus 1/T plot which has been found to be 0.97eV and 114 A/cm(2)K(2), respectively. Results indicate that the high barrier height is achieved for the Au/FC/n-Si metal-organic layer-semiconductor diode as compared to the Au/n-Si metal-semiconductor (MS) diode.en_US
dc.identifier.citationYıldırım, M., Erdoğan, A., Yüksel, Ö. F., Kuş, M., Can, M., Akın, Ü., Tuğluoğlu, N. (2019). The Synthesis of 4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) Organic Semiconductor and Use of It as an Interlayer on Au/n-Si Diode. Journal of Materials Science: Materials in Electronics, 30(11), 10408-10418.
dc.identifier.doi10.1007/s10854-019-01382-1en_US
dc.identifier.endpage10418en_US
dc.identifier.issn0957-4522en_US
dc.identifier.issn1573-482Xen_US
dc.identifier.issue11en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage10408en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-019-01382-1
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38328
dc.identifier.volume30en_US
dc.identifier.wosWOS:000469399700037en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYıldırım, M.
dc.institutionauthorYüksel, Ö. F.
dc.institutionauthorAkın, Ü.
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.relation.ispartofJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subject4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline)
dc.subjectAu/n-Si diode
dc.subjectorganic semiconductor
dc.titleThe synthesis of 4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diodeen_US
dc.typeArticleen_US

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