The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage

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dc.contributor.authorErdal, M. O.
dc.contributor.authorKocyigit, A.
dc.contributor.authorYildirim, M.
dc.date.accessioned2020-03-26T20:20:35Z
dc.date.available2020-03-26T20:20:35Z
dc.date.issued2020
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractIn order to determine the surface states (N-ss), series resistance (R-s), and (Cu:TiO2) interlayer effects on the electrical characteristics of the Al/Cu:TiO2/n-Si metal oxide semiconductor (MOS) capacitors, both capacitance (C) and conductance (G) values were measured for frequency ranges of 10 kHz-1 MHz and +/- 5 V voltage ranges. In addition, to know Cu doping concentration effect on the MOS capacitor, the Al/Cu:TiO2/n-Si was fabricated with various rates Cu:TiO2 interlayer (5, 10, 15%) grown on n-Si susbtrate by spin-coating. The increase in capacitance via decreasing frequencies was attributed to the existence of N-ss and their relaxation time. The frequency dependent diffusion potential (V-d), doping of donor atoms (N-d), Fermi energy (E-F), barrier height (Phi b) and depletion layer width (W-d) values were extracted from the linear part of reverse bias C-2-V curves. While the value the R-s decreased with increasing frequency, the N-ss values increased for the three MOS capacitors. The profiles of N-ss and R-s depending on voltage were also plotted by Nicollian-Brews methods and using high-low frequency (C-HF-C-LF) capacitance, respectively. The mean values of N-ss for three capacitors were found at about 10(12) eV(-1)cm(-2) as suitable electronic devices. The lower values of the N-ss can be attributed to passivation effect of Cu:TiO2 interlayer.en_US
dc.identifier.doi10.1016/j.microrel.2020.113591en_US
dc.identifier.issn0026-2714en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.microrel.2020.113591
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38620
dc.identifier.volume106en_US
dc.identifier.wosWOS:000517853100003en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPERGAMON-ELSEVIER SCIENCE LTDen_US
dc.relation.ispartofMICROELECTRONICS RELIABILITYen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectAl/Cu:TiO2/n-Si (MOS) capacitorsen_US
dc.subjectSurface statesen_US
dc.subjectSeries resistanceen_US
dc.subjectCu doping effecten_US
dc.titleThe rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltageen_US
dc.typeArticleen_US

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