Temperature dependent current-voltage characteristics of Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices

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dc.contributor.authorErdal, Mehmet Okan.
dc.contributor.authorKocyigit, Adem.
dc.contributor.authorYıldırım, Murat.
dc.date.accessioned2020-03-26T20:19:20Z
dc.date.available2020-03-26T20:19:20Z
dc.date.issued2019
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Biyoteknoloji Bölümüen_US
dc.description.abstractWe fabricated undoped and Cu doped TiO2 thin films by spin coating technique and employed the films as interfacial oxide layer between the Al and n-type Si to investigate the effect of temperature on the Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices. For that aim, the I-V measurements were performed in the range of 50 K-400 K by 50 K interval. The devices exhibited good rectifying behavior and thermal response in a wide range temperature. Ideality factor, barrier height and series resistance were calculated from I-V measurements for various temperatures by thermionic emission theory, Norde and Cheung methods and discussed in the details. The obtained results revealed that the device parameters are a strong function of the temperature. The interface states (N-ss) were affected by the changing of the temperatures. The Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices can be performed for wide range temperatures in various technological applications.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [16401044]; Selcuk UniversitySelcuk Universityen_US
dc.description.sponsorshipThis work is supported by Selcuk University BAP office with Project Numbers 16401044. Authors would like to acknowledge the support of the Selcuk University for this research.en_US
dc.identifier.citationErdal, M. O., Kocyigit, A., Yıldırım, M. (2019). Temperature Dependent Current-Voltage Characteristics of Al/TiO2/n-Si and Al/Cu: TiO2/n-Si Devices. Materials Science in Semiconductor Processing, 103, 104620.
dc.identifier.doi10.1016/j.mssp.2019.104620en_US
dc.identifier.issn1369-8001en_US
dc.identifier.issn1873-4081en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.mssp.2019.104620
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38223
dc.identifier.volume103en_US
dc.identifier.wosWOS:000483376900010en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYıldırım, Murat.
dc.language.isoenen_US
dc.publisherELSEVIER SCI LTDen_US
dc.relation.ispartofMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSINGen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectCu doped TiO2 thin filmsen_US
dc.subjectAl/TiO2/n-Sien_US
dc.subjectTemperature-dependent I-V characteristicsen_US
dc.subjectSpin coatingen_US
dc.titleTemperature dependent current-voltage characteristics of Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devicesen_US
dc.typeArticleen_US

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