Temperature Dependent Electrical and Dielectric Properties of Au/Polyvinyl Alcohol (Ni, Zn-Doped)/N-Si Schottky Diodes

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dc.contributor.authorDökme, İ.
dc.contributor.authorAltındal, S.
dc.contributor.authorTunç, T.
dc.contributor.authorUslu, İ.
dc.date.accessioned2020-03-26T18:05:08Z
dc.date.available2020-03-26T18:05:08Z
dc.date.issued2010
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs) were studied ill the temperature range of 80-400 K. The investigation of various SDs fabricated with different types of interfacial layer is important for understanding the electrical and dielectric properties of SDs. Therefore, in this study polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si SDs were calculated from the capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements. The effects of interface state density (N(ss)) and series resistance (R(s)) on C-V characteristics were investigated in the wide temperature range. It was found that both of the C-V-T and G/w-V-T curves included two abnormal regions and one intersection point. The dielectric constant (epsilon ''), dielectric loss (epsilon ''), dielectric loss tangent (tan delta) and the ac electrical conductivity (sigma(ac)) obtained from the measured capacitance and conductance were studied for Au/PVA (Ni, Zn-doped)/n-Si SDs. Experimental results show that the values of epsilon', epsilon '' and tan delta are a strong function of the temperature. Also, the results indicate the interfacial polarization can be more easily occurred at high temperatures.en_US
dc.identifier.citationDökme, İ., Altındal, S., Tunç, T., Uslu, İ., (2010). Temperature Dependent Electrical and Dielectric Properties of Au/Polyvinyl Alcohol (Ni, Zn-Doped)/N-Si Schottky Diodes. Microelectronics Reliability, 50(1), 39-44. DOI: 10.1016/j.microrel.2009.09.005
dc.identifier.doi10.1016/j.microrel.2009.09.005en_US
dc.identifier.endpage44en_US
dc.identifier.issn0026-2714en_US
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage39en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.microrel.2009.09.005
dc.identifier.urihttps://hdl.handle.net/20.500.12395/25317
dc.identifier.volume50en_US
dc.identifier.wosWOS:000274610400005en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorUslu, İ.
dc.language.isoenen_US
dc.publisherPERGAMON-ELSEVIER SCIENCE LTDen_US
dc.relation.ispartofMicroelectronics Reliabilityen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.titleTemperature Dependent Electrical and Dielectric Properties of Au/Polyvinyl Alcohol (Ni, Zn-Doped)/N-Si Schottky Diodesen_US
dc.typeArticleen_US

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