Double barrier heights in 5,6,11,12-tetraphenylnaphthacene (rubrene) based organic Schottky diode
Küçük Resim Yok
Tarih
2013
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
ELSEVIER SCIENCE SA
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
5,6,11,12-Tetraphenylnaphthacene (rubrene) was grown on p type Si (100) substrate using spin coating technique. We have fabricated an Al/rubrene/p-Si Schottky device and measured the current-voltage (I-V) characteristics in the temperature range from 75 to 300 K by steps of 25 K. An abnormal decrease in the experimental barrier height Phi(B) and an increase in the ideality factor n with a decrease in temperature have been observed. The I-V characteristics of Al/rubrene/p-Si Schottky diode are analyzed on the basis of thermionic emission (TE) theory and the assumption of double Gaussian distribution of barrier heights due to barrier inhomogeneities. The modified Richardson plots of In(I-0/T-2) - (1/2)(q sigma((i))(s0)/kT)(2) versus 1000/T gives [GRAPHICS] and A(R)((i)) values as 1.186 and 0.571 eV, and 33.85 and 84.63 A cm(-2) K-2, respectively. The modified Richardson constant value of A(R)((2)) = 33.85 A cm(-2) K-2 for high temperature range (175-300 K) is very close to the theoretical value of 32 A cm(-2) K-2 for p-Si. (c) 2013 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Rubrene thin film, Schottky diode, Spin coating method, Barrier height, Gaussian distribution, Richardson constant
Kaynak
SYNTHETIC METALS
WoS Q Değeri
Q2
Scopus Q Değeri
Cilt
180
