Double barrier heights in 5,6,11,12-tetraphenylnaphthacene (rubrene) based organic Schottky diode

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dc.contributor.authorBaris, Behzad
dc.contributor.authorYuksel, Omer Faruk
dc.contributor.authorTugluoglu, Nihat
dc.contributor.authorKaradeniz, Serdar
dc.date.accessioned2020-03-26T18:41:34Z
dc.date.available2020-03-26T18:41:34Z
dc.date.issued2013
dc.departmentSelçuk Üniversitesien_US
dc.description.abstract5,6,11,12-Tetraphenylnaphthacene (rubrene) was grown on p type Si (100) substrate using spin coating technique. We have fabricated an Al/rubrene/p-Si Schottky device and measured the current-voltage (I-V) characteristics in the temperature range from 75 to 300 K by steps of 25 K. An abnormal decrease in the experimental barrier height Phi(B) and an increase in the ideality factor n with a decrease in temperature have been observed. The I-V characteristics of Al/rubrene/p-Si Schottky diode are analyzed on the basis of thermionic emission (TE) theory and the assumption of double Gaussian distribution of barrier heights due to barrier inhomogeneities. The modified Richardson plots of In(I-0/T-2) - (1/2)(q sigma((i))(s0)/kT)(2) versus 1000/T gives [GRAPHICS] and A(R)((i)) values as 1.186 and 0.571 eV, and 33.85 and 84.63 A cm(-2) K-2, respectively. The modified Richardson constant value of A(R)((2)) = 33.85 A cm(-2) K-2 for high temperature range (175-300 K) is very close to the theoretical value of 32 A cm(-2) K-2 for p-Si. (c) 2013 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipGiresun University BAP officeGiresun University [FEN-BAP-A-160512-26]en_US
dc.description.sponsorshipThis work is partly supported by Giresun University BAP office with the research project number FEN-BAP-A-160512-26. One of the authors (B. Baris) is grateful for financial assistance provided by Giresun University BAP Office.en_US
dc.identifier.doi10.1016/j.synthmet.2013.07.029en_US
dc.identifier.endpage42en_US
dc.identifier.issn0379-6779en_US
dc.identifier.startpage38en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.synthmet.2013.07.029
dc.identifier.urihttps://hdl.handle.net/20.500.12395/29398
dc.identifier.volume180en_US
dc.identifier.wosWOS:000325671000006en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SAen_US
dc.relation.ispartofSYNTHETIC METALSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectRubrene thin filmen_US
dc.subjectSchottky diodeen_US
dc.subjectSpin coating methoden_US
dc.subjectBarrier heighten_US
dc.subjectGaussian distributionen_US
dc.subjectRichardson constanten_US
dc.titleDouble barrier heights in 5,6,11,12-tetraphenylnaphthacene (rubrene) based organic Schottky diodeen_US
dc.typeArticleen_US

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