Determination of contact parameters of Au/n-Ge schottky barrier diode with rubrene interlayer

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dc.contributor.authorYildirim, Murat
dc.date.accessioned2020-03-26T19:34:48Z
dc.date.available2020-03-26T19:34:48Z
dc.date.issued2017
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Biyoteknoloji Bölümüen_US
dc.description.abstractElectrical characterization of an Au/n-Ge semiconductor Schottky diode with organic (rubrene) interface has been systematically carried out over a wide temperature range. In sample fabrication stage, first, the ohmic In contact has been performed on one surface of n-Ge wafer grown in direction of (100). Later, the other surface of the wafer has been coated with rubrene by spin-coating method and then the Schottky contact has been constituted on the organic material via thermal evaporation method. The current-voltage (I-V) characteristics of prepared Schottky diode has been measured at a temperature range of 150-300 K and it has been observed that the diode have a rather good rectification behavior at all temperature. By using the I-V characteristics, the idealite factor, barrier height and some other diode parameters have been calculated for all temperatures. These parameters have also been calculated by means of Cheung-Cheung method. Werner and Guttler's model has been employed to analyze the temperature dependence of barrier height and ideality factor at low temperatures. The standard deviation of the zero-bias barrier height was calculated as 120 mV and the voltage coefficients of the barrier height were determined as rho(z) = 0.184 and rho(3) = 0.232 mV. At high temperatures, the zero-bias barrier height decreases with increasing temperature because of the temperature dependence of semiconductor band gap. The non-linearity has been observed in the Richardson plot due to temperature dependence of the zero-bias barrier height. Richardson constant was determined by using different methods. Of the current-voltage analysis's has emerged an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. It is determined that these abnormalies result due to the barrier height inhomogeneities prevailing at the organic-semiconductor interface. As a result, homogeneities in Au/rubrene/n-Ge Schottky barrier diode can be successfully characterized by a Gaussian distribution.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [15401014]en_US
dc.description.sponsorshipThis work is supported by Selcuk University BAP office with the Research Project number 15401014. The author acknowledge Assoc. Prof. Dr. O.F. YUKSEL for fruitful discussion and valuable contribution in experiment measurement.en_US
dc.identifier.citationYıldırım, M. (2009). Determination of Contact Parameters of Au/n-Ge Schottky Barrier Diode with Rubrene Interlayer. Journal of Polytechnic-Politeknik Dergisi, 20(1), 165-173.
dc.identifier.endpage173en_US
dc.identifier.issn1302-0900en_US
dc.identifier.issn2147-9429en_US
dc.identifier.issue1en_US
dc.identifier.pmid#YOKen_US
dc.identifier.startpage165en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12395/34956
dc.identifier.volume20en_US
dc.identifier.wosWOS:000447836400019en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakTR-Dizinen_US
dc.institutionauthorYildirim, Murat
dc.language.isoenen_US
dc.publisherGAZI UNIVen_US
dc.relation.ispartofJOURNAL OF POLYTECHNIC-POLITEKNIK DERGISIen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectSchottky Contactsen_US
dc.subjectRubrene Thin Filmen_US
dc.subjectGaussian Distributionen_US
dc.subjectInhomogeneitiesen_US
dc.titleDetermination of contact parameters of Au/n-Ge schottky barrier diode with rubrene interlayeren_US
dc.typeArticleen_US

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