Solution processed white light photodetector based N, N '-di(2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistor

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dc.contributor.authorTozlu, Cem
dc.contributor.authorKuş, Mahmut
dc.contributor.authorCan, Mustafa
dc.contributor.authorErsöz, Mustafa
dc.date.accessioned2020-03-26T18:58:30Z
dc.date.available2020-03-26T18:58:30Z
dc.date.issued2014
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractIn this study, a solution-processed n-type photo-sensing organic thin film transistor was investigated using polymeric dielectric under different white light illuminations. N, N'-di (2-ethylhexyl)-3,4,9,10-perylene diimide and divinyl tetramethyl disiloxane-bis (benzo-cyclobutene) were used as a soluble active organic semiconductor and as a dielectric material, respectively. Stable amplification was observed in the visible region without gate bias by the device. The electrical characterization results showed that an n-type phototransistor with a saturated electron mobility of 0.6 x 10(-3) cm(2)/V.s and a threshold voltage of 1.8 V was obtained. The charge carrier density of the channel of the device exhibited photo-induced behaviors that strongly affected the electrical properties of the transistor. The photosensitivity and photoresponsivity values of the device were 63.82 and 24 mA/W, respectively. These findings indicate that perylene diimide is a promising material for use on organic based phototransistors. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipFP7-LAMAND project [PN: 245565]en_US
dc.description.sponsorshipWe are grateful to the FP7-LAMAND (PN: 245565) project for providing support funds. In addition, we thank Ass. Prof. A. Tahir Bayrac for proofreading the text.en_US
dc.identifier.doi10.1016/j.tsf.2014.07.055en_US
dc.identifier.endpage27en_US
dc.identifier.issn0040-6090en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage22en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.tsf.2014.07.055
dc.identifier.urihttps://hdl.handle.net/20.500.12395/31141
dc.identifier.volume569en_US
dc.identifier.wosWOS:000344749400005en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SAen_US
dc.relation.ispartofTHIN SOLID FILMSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectPhototransistoren_US
dc.subjectPerylene diimideen_US
dc.subjectPhotosensoren_US
dc.titleSolution processed white light photodetector based N, N '-di(2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistoren_US
dc.typeArticleen_US

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