Improve performance and radiation resistance of transistors
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Date
2013
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Selçuk Üniversitesi
Access Rights
info:eu-repo/semantics/openAccess
Abstract
At present, the problem of increasing performance and radiation resistance of transistors has been given much attention as electronic equipment of spacecraft, including satellites, is exposed to various radiation emissions, such as the Earth's radiation belts, cosmic and galactic rays.
Description
Keywords
radiation effects, bipolar transistors, lifetime, recombination component, electron irradiation, resorption time
Journal or Series
Journal of Selcuk University Natural and Applied Science
WoS Q Value
Scopus Q Value
Volume
2
Issue
2
Citation
Tuyakbayev, D., Kocer, S. (2013).Improve performance and radiation resistance of transistors. Journal of Selcuk University Natural and Applied Science, 2, (2), 9-17.
