Improve performance and radiation resistance of transistors

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dc.authorid0000-0002-1246-5935en_US
dc.authorid0000-0002-4849-747Xen_US
dc.contributor.authorTuyakbayev, Daulet
dc.contributor.authorKocer, Sabri
dc.date.accessioned2020-12-22T12:40:31Z
dc.date.available2020-12-22T12:40:31Z
dc.date.issued2013en_US
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractAt present, the problem of increasing performance and radiation resistance of transistors has been given much attention as electronic equipment of spacecraft, including satellites, is exposed to various radiation emissions, such as the Earth's radiation belts, cosmic and galactic rays.en_US
dc.identifier.citationTuyakbayev, D., Kocer, S. (2013).Improve performance and radiation resistance of transistors. Journal of Selcuk University Natural and Applied Science, 2, (2), 9-17.en_US
dc.identifier.endpage17en_US
dc.identifier.issn2147-3781en_US
dc.identifier.issue2en_US
dc.identifier.startpage9en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12395/40887
dc.identifier.volume2en_US
dc.language.isoenen_US
dc.publisherSelçuk Üniversitesien_US
dc.relation.ispartofJournal of Selcuk University Natural and Applied Scienceen_US
dc.relation.publicationcategoryMakale - Ulusal - Editör Denetimli Dergien_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectradiation effectsen_US
dc.subjectbipolar transistorsen_US
dc.subjectlifetimeen_US
dc.subjectrecombination componenten_US
dc.subjectelectron irradiationen_US
dc.subjectresorption timeen_US
dc.titleImprove performance and radiation resistance of transistorsen_US
dc.typeArticleen_US

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